Mohammed Waleed Muayad -

Gender	MALE
Place of Work	Renewable Energy Research Center (RERC)
Position	Assisst. Lecture / researcher
Qualification	Master
Speciality	Applied Physics/ nanotechnology
Email	mohammed.muayad25@ntu.edu.iq
Phone	+9647508651027
Address	kirkuk, kirkuk, Kirkuk, Iraq

Synthesis of SnO2 Nanoparticles via Laser Ablation for High-Performance Photodetectors

Apr 29, 2025

Journal Plasmonics

publisher Springer US

DOI https://doi.org/10.1007/s11468-025-02933-5

In the present work, tin dioxide nanoparticles (SnO2 NPs) were synthesized using the laser ablation technique and employed in constructing high-performance photodetectors. SnO2 NPs were prepared using Nd:YAG laser pulses 1064 nm ablated on Sn target immersed in deionized water, and the effect of different laser pulse energies such as 300 mJ, 500 mJ, and 700 mJ on the properties of SnO2 NPs was investigated. Optical, structural, and electrical characterizations were performed using UV–VIS spectroscopy, XRD, and TEM. The results have shown that SnO2 NPs ablated at the highest energy produce a good photodetector due to their optimal size, phase, and band gap (Eg). The nanoparticles had a tetragonal rutile phase as confirmed by XRD; the band gap energy gap also increased with low laser energy due to quantum confinement where the energy gap was 4.42 eV, 3.92 eV, and 3.81 eV for 300 mJ, 500 mJ, and 700 mJ, respectively. The photocurrent determined the optoelectronic properties under white light, and the devices belonging to 700 mJ SnO NPs obtained the highest photocurrent density. The spectral responsivity analysis showed that SnO2/n-Si photodetectors exhibit three response bands at ~ 363 nm, ~ 660 nm, and ~ 806 nm, regarding the highest responsivity of 0.19 A/W, 0.25 A/W, and 0.37 A/W, respectively. The results demonstrate that laser ablations are a good green and eco-friendly method for SnO2 NP synthesis suitable for future sustainable energy applications, including renewable energy sources and optical sensing that preserve the environment. This work may suggest that SnO2 NPs may be applied in self-powered photodetectors and efficient solar energy systems to produce green nanomaterials for future energy applications.

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Synthesis of Al2O3 Nanoparticles via Laser Ablation for Photodetectors Application

Apr 21, 2025

Journal Plasmonics

publisher Springer US

DOI https://doi.org/10.1007/s11468-025-02898-5

This research investigates the creation of aluminum oxide (Al2O3) nanoparticles using pulsed laser ablation in liquid (PLAL) and their utilization in photodetector devices constructed on porous silicon (PS) substrates. Different laser energy levels (400, 600, 800, and 1000 mJ) were utilized to produce Al2O3 nanoparticles, and their structural, optical, and electrical properties were methodically examined. Scanning electron microscopy (SEM) demonstrated the spherical morphology of Al2O3 nanoparticles, whilst X-ray diffraction (XRD) investigation validated their cubic phase structure. The optical absorption spectra revealed distinct surface plasmon resonance peaks at around 228 nm, enhancing absorption as laser energy rose. The band gaps of Al2O3 nanoparticles diminished from 4.83 eV to 4.19 eV with increasing laser energy, signifying an enlargement in nanoparticle size and a decrease in quantum …

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Synthesis of zinc oxide nanoparticles via laser ablation on porous silicon for gas sensors application

Feb 1, 2025

Journal Journal of optics

publisher Springer Nature Singapore

DOI https://doi.org/10.1007/s12596-025-02531-y

Zinc Oxide nanoparticles (ZnO NPs) were prepared using a pulsed laser ablation process, using Q-switched Nd: YAG laser pulses of 1064 nm wavelength, 1 Hz pulse repetition rate, pulse duration of 9 ns, with different laser pulse energy (350 mJ, 500 mJ, 650 mJ), and the porous silicon prepared by electrochemical etching with fixed parameters (25% HF, current density of 15 mA/cm 2 for 10 min). The X-ray diffraction test shows a broadening diffraction peak of the PS as a decrease in the crystallite size. The sharp peaks of the ZnO NPs refer to the high orientation of ZnO NPs along the c-axis vertical to the PS layer. FE-SEM shows a highly porous surface with a uniform distribution of holes on the silicon surface. Increasing the value of laser energy leads to larger particle sizes and more spherical, homogeneous, and broad size distribution. The examination of optical characteristics revealed that the ZnO NPs have a …

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Analysis of the characteristics of zinc oxide nanofilm applied to a glass substrate

Dec 3, 2024

publisher 11TH GLOBAL CONGRESS ON RENEWABLE ENERGY AND ENVIRONMENT

In this research, the properties of zinc oxide nanofilm deposited on a glass surface were studied. The effect of zinc oxide on the properties of glass was studied. XRD showes ZnO film was crystallized in the wurtzite phase (polycrystalline structure) and presents a preferential orientation along the c-axis, SEM image show the uniform surface with some void spaces. Instead of spherical shapes elongated rod-like architecture with rough surface is noticed. The Average grain diameter was about (119nm), roughness average (0.942) and RMS (1.14 nm), of FTIR consist a several stretch modes this modes come from several source, where the band (410.84 cm-1) corresponded to the Zn-O Stretching Vibration for a tetrahedral surrounding of the Zinc atoms, UV-VIS showes increasing thickness of ZnO film leads to grain size of ZnO increasing and this will lead to decreasing in effect of quantum confinement (decreasing in …

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Structural, Morphology and PL Properties of ZnO Film Deposition on Porous Silicon

Jul 1, 2014

Journal Engineering and Technology Journal

publisher University of Technology

ZnO thin film was deposited on glass and porous silicon by spray pyrolysis technology with fixed parameters consist (substrate temperature 400Co, deposition rate 100nm/min), and the measurements of structural (XRD), morphology (AFM) and photoluminesces (PL) refer to good growth of ZnO after using porous silicon more than using glass and that's come from sponge like structure of porous silicon and large spastic area of porous silicon (about 500m2/cm3).

ZnO/PS/p-Si heterojunction properties

Jun 5, 2014

Journal The European Physical Journal-Applied Physics

publisher EDP Sciences

DOI https://doi.org/10.1051/epjap/2014130470

Issue 66

Volume 2

In this paper porous silicon (PS) has been prepared by electrochemical etching technique and then ZnO thin film deposition on PS by spray pyrolysis method, the study of AFM show improve the structural stability of the PS substrate with crystalline growth of ZnO thin film. PL spectra explained a blue-shifting in PS layer come from oxidation the surface of PS after coating with ZnO film, Raman measurement show quantum confinement in PS layers with decreasing in variation mode of ZnO film, and the J-V characteristic show increasing in resistivity of Al/ZnO/PS/c-Si/Al due to increasing in depletion layer junction compere with PS layer.

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Effect of ZnO layers on porous silicon properties

May 1, 2014

Journal International Journal of Electrochemical Science

publisher Elsevier

DOI https://doi.org/10.1016/S1452-3981(23)07926-9

In this paper the preparation of porous silicon (p-type) has been established by electrochemical etching and deposited by ZnO thin film using a chemical spray pyrolysis method. The results of this paper include the AFM study shows an improvement in the structural stability of the PS substrate with crystalline growth of ZnO thin film, the XRD measurement shows decreasing in crystal size of Porous Silicon after coating with ZnO, the photoluminescnce spectra that explained in a blue - shifting in porous silicon layer comes from an oxidation on the porous silicon surface, and the Raman spectra shows shifting to low vibration energy level which comes from decreasing in pore diameter of the PS and decreasing in the grain size of ZnO particle.

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Typical of morphological properties of porous silicon

Feb 1, 2013

Journal International Journal of Basic and Applied Sciences IJBAS-IJENS

publisher Elsevier

DOI https://doi.org/10.1016/S1452-3981(23)07926-9

In this paper we prepared porous silicon layers from p-type silicon by electrochemical etching method. And study the morphology properties of PS samples by changing etching time and imaged PS sample in Atomic force microscopy (AFM). We found that from AFM images show the PS layer has sponge like structure, and average diameter of pore and thickness of PS layer decreasing with silicon< 111> oriented more than with silicon< 100>. And also we found that when increasing etching of time porosity of PS increasing specifically in< 100>.