● Ph.D.,

Dec 24, 2007 - Jan 11, 2011

Electrical and electronic Engineering/Laser, university sains malaysia, , malaysia june 11th, 2011

● M.Sc.,

Sep 1, 2001 - Jun 6, 2004

● M.Sc., laser Engineering, University of AL-Nahreen, Iraq

● B.Sc.,

Sep 1, 1998 - Jun 1, 2001

● B.Sc., ., laser Engineering, University of AL-Nahreen, Iraq,

Head of Medical equipment's Engineering Techniques Department, [Head of Medical equipment's Engineering Techniques Department,]

Sep 1, 2025 - Present

Head of Medical equipment's Engineering Techniques Department,

Design of GaN-based VCSEL with high performance

Dec 12, 2014

Journal OPTOELECTRONICS AND ADVANCED MATERIALS – RAPID COMMUNICATIONS

Issue 1-2

Volume 8

Doping concentration of the distributed Bragg reflectors (DBRs) can strongly affect efficiency of the vertical cavity surface emitting laser (VCSEL) by increasing radiative recombination of carriers. In this paper, Integrating System Engineering Technology Computer Aided Design (ISETCAD) software was used to enhance the performance of GaN-based VCSEL by changing doping concentrations of the DBRs. the effect DBRs doping concentration on the threshold current and differential quantum efficiency in GaN VCSELs has been investigated.

The effect of reflectivity on vcsel output performance

Jan 1, 2011

Journal Int. J. Nanoelectronics and Materials

Issue 4

The effect of the reflectivity of the output mirror on the single-mode multi-quantum wells (MQWs) vertical cavity surface emitting lasers (VCSEL) performances is investigated. Relevant VCSEL design with numerous (DBR) pairs has been designed and characterized using laser technology-integrated simulation program ISETCAD. The number of quarter-wave DBR that remaining in the upper mirror could be used to achieve the optimum performance of VCSEL in a top surface emitting geometry, such as maximum output power, threshold current, slope output efficiency, differential quantum efficiency and mode gain.

Temperature effect on VCSEL output performance

Sep 9, 2009

Journal OPTOELECTRONICS AND ADVANCED MATERIALS – RAPID COMMUNICATIONS

Issue 11

Volume 3

The steady state performance of vertical cavity surface emitting laser (VCSEL) structure under the influence of the temperature are numerically investigated by using laser technology-integrated program ISETCAD simulation. In this study, we observed that the increase in temperature causes the increase in the threshold current, the reduction of output power, shift of the lasing wavelength, and decrease in both of the slope output efficiency and the differential quantum efficiency. Additionally, the operating lifetime of semiconductor lasers usually decreases exponentially with temperature. Therefore it is essential to design lasers with consistently low temperature for better reliability. All material parameters are evaluated based on the recent literature values.

The Studies Of Doping Concentration Effects On VCSEL Laser

Jan 6, 2006 - Mar 6, 2006

Publisher American Institute of Physics

Country malaysia

Location malaysia

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