1

Oct 27, 2025 - Present

حاصل على شهادة الدكتوراه في فيزياء الحالة الصلبة فضلا عن شهادة الدبلوم التقني في تخصص الالكترونيك

1 [مقرر لقسم هندسة تقنيات الحاسوب /الدراسة المسائية لاكثر من عامين]

Nov 1, 2001 - Dec 1, 2003

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1 [مقرر لقسم هندسة تقنيات الحاسوب /الدراسة المسائية لاكثر من عامين]

Mar 18, 2002 - Present

تدريسي

The absorber and buffer layer thicknesses for CdTe/CdS based thin film solar cell efficiency at various operational temperatures

Oct 1, 2021

Journal Indonesian Journal of Electrical Engineering and Computer Science

publisher Journal of PhysiIndonesian Journal of Electrical Engineering and Computer Sciencecal Science

DOI 10.11591/ijeecs

Issue No.1

Volume Vol. 24

Cadmium telluride (CdTe)/cadmium sulfide (CdS) solar cell is a promising candidate for photovoltaic (PV) energy production, as fabrication costs are compared by silicon wafers. We include an analysis of CdTe/CdS solar cells while optimizing structural parameters. Solar cell capacitance simulator (SCAPS)-1D 3.3 software is used to analyze and develop energy-efficient. The impact of operating thermal efficiency on solar cells is highlighted in this article to explore the temperature dependence. PV parameters were calculated in the different absorber, buffer, and window layer thicknesses (CdTe, CdS, and SnO2). The effect of the thicknesses of the layers, and the fundamental characteristics of open-circuit voltage, fill factor, short circuit current, and solar energy conversion efficiency were studied. The results showed the thickness of the absorber and buffer layers could be optimized. The temperature had a major impact on the CdTe/CdS solar cells as well. The optimized solar cell has an efficiency performance of >14% when exposed to the AM1.5 G spectrum. CdTe 3000 nm, CdS 50 nm, SnO2 500 nm, and (at) T 300k were the I-V characteristics gave the best conversion open circuit voltage (Voc)=0.8317 volts, short circuit current density (Jsc)=23.15 mA/cm2, fill factor (FF)%=77.48, and efficiency (η)%=14.73. The results can be used to provide important guidance for future work on multi-junction solar cell design.

The Effect of Embedding a Thin Layer of a Polymer on Resistive Switching Characteristics for Au/CdSe/Au Structure

Oct 1, 2020

Journal International Journal of Nanoelectronics and Materials

publisher International Journal of Nanoelectronics and Materials

DOI https://ijneam.unimap.edu.my/images/PDF/IJNEAM%20OCT%202020/Vol_13_No_4_2020_4_659-670.pdf

Volume Vol. 13

The phenomena of resistance random access memory (RRAM) depending on the altering of resistance between at least two values has been found in materials such as transition metal oxides, some semiconductors or insulators materials, named as resistive switching. The developments on RRAM have been started due to its low power consumption, simple structure, high-density, high – speed resistive switching, impressive retention with small-feature size. Regardless of the wide-ranging research, basic switching conduction mechanisms of the resistive memory structures are basically depending on the certain special materials. To improve the current structure performance, the Cellulose Acetate as a polymer was added to the active layer (cadmium selenide CdSe). The polymer material was used to form the second active coating to construct the Au/CdSe/polymer/Au as new structure. This material may enhance the cell performance by increasing the charges traps. This procedure leads to increasing resistance ratio (Rratio) and decreasing the working voltages of structure. A spin coating apparatus was used to coating the polymer layer on CdSe. The glass was used as a substrate and the first active layer deposited under vacuum by thermal evaporating system. The cell was sandwiched between the two electrodes in the same materials (Au) which deposited also under the same system. Bipolar resistive switch, in this memory structure, is observed in its switching operation. The zone of the upper electrode (Au) has a significant affect upon the resistive performance. This influence is became further in the big upper electrode zone (TEL=13.5mm2) where the high-resistance (HRS) are inversely related to the upper electrode zone (A). This occurs inducing more traps in case TEL (hanging sentence). Finally, the (Rratio) is directly proportional with the electrode zone (A). The compliance current (Icc=30mA) are used for protecting the structure from the damage. The current structure has many properties, such as Vset = 3.9V, VReset = -1.9V and Rratio about 176 in case of TEL. We conclude from this research that the embedment of a thin layer of a polymer which have been used in this research are improving the high density, enhancing high speed with low cost as well.

The Effect of Embedding a Thin Layer of a Polymer on Resistive Switching Characteristics for Au/CdSe/Au Structure

Apr 20, 0024

Journal International Journal of Nanoelectronics and Materials

publisher Journal of Physical Science

DOI https://doi.org/10.21315/jps2023.35.1.2

Issue No.4

Volume Vol. 13

Silicon-zinc oxide (Si-ZnO) junction has been prepared using the chemical bath technique. The zinc oxide layer was examined using different techniques, including X-ray spectroscopy and a UV-visible spectrophotometer. The ZnO film images show that the films are homogeneous with an average grain size of 70 nm, while the X-ray spectrum shows that the layers are amorphous with some crystalline phase peaks appearing between 2θ=20° and 35°, which belong to ZnO. Transmittance, absorbance and extinction coefficient were varied over the visible light wavelength range, and the energy gap of the films was about 2.6 eV. In both forward and reverse bias, the junction revealed diode characteristics. The influence of light on the current intensity was evident and reached about 240 mA compared to the current intensity in the dark state. Also, the current intensity of the diode increased at each applied voltage with the increase in the intensity of the light shining on it.

Human Identification using Local Binary Patterns for Finger Outer Knuckle

Dec 11, 2020 - Dec 12, 2020

Publisher IEEE 8th Conference on Systems, Process and Control (ICSPC), Melaka, Malaysia

Country Malesia

Location

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