Muayyad N. Fathula
Research Interests
| Gender | MALE |
|---|---|
| Place of Work | Technical Engineering College/ Kirkuk |
| Position | Lecturer |
| Qualification | Ph.d |
| Speciality | sold state physics |
| mnfathlla@ntu.edu.iq | |
| Phone | 07700581426 |
| Address | Northern Technical University Technical Engineering College / Kirkuk Electronic and Control, kerkuk, Mosul, Iraq |
Publications
Effect of Substrate and Annealing Temperature on Hall Effect and Activation Energy of CuISe 2 Compound
Mar 31, 2023Journal IRAQI JOURNAL OF APPLIED PHYSICS
publisher Muayyad N. Fathula
DOI 1813-2065
Issue 3b
Volume 19
Polycrystalline CuISe2 thin films were deposited on glass substrate. The Hall effect discovered in the prepared films at various substrate and annealing temperatures, investigates the type of carriers, carrier concentration, and Hall mobility at room temperature. The thin films were n-type, the Hall mobility had the highest value (36.45 cm2/V.s) for films prepared with substrate temperature of 150°C and annealing temperature of 200°C and the lowest value (6.08 cm2/V.s) for films prepared films with substrate temperature of 350°C and annealing temperature of 400 °C (thickness of 1200Å). It was found that the substrate and annealing temperatures have changed the Hall mobility and carrier concentration.
The Optical and Structural Properties of Thermally Vaporized Composite Thin Films
May 1, 2024Journal IRAQI JOURNAL OF APPLIED PHYSICS
publisher Muayyad N. Fathula
DOI 1813-2065
Issue 3
Volume 20
In the current work, CuAlSe2 alloys were fabricated by melting the stoichiometric weights of Cu, Al, and Se in a sealed quartz ampoule at a vacuum of about 3×10-2 mbar. The alloy is applied to a soda lime glass substrate, heated to various temperatures, and then thermally evaporated at a pressure of roughly 10-6 mbar. The thin layer has a thickness of 1200±100 Å. Thin films were polycrystalline with sphalerite structure but the bulk showed chalcopyrite structure throughout. An increase in the optical energy gap with substrate temperature and direct transitions in the thin layer were observed in the optical experiments. As the annealing period was raised to two hours, the films annealed at 200-400°C indicated an increase in the energy gap.
The Influence of Bi on Compounds on Their Structural and Electrical Properties
Sep 30, 2024Journal IRAQI JOURNAL OF APPLIED PHYSICS
publisher Muayyad N. Fathula
DOI 1813-2065
Issue 3
Volume 20
The high-temperature superconductivity of Tl2-xBixBa2Ca2Cu3O10 and its electrical resistivity were measured at temperatures ranging from 90 to 330K. According to the findings, when the Bi ions concentration is increased from 0.1 to 0.5, the zero resistivity's critical temperature rises from 121 to 146K. The x-ray diffraction has also been used to analyze the structure of the Tl2Bi2Ba2Ca2Cu3O10 compound. The analysis revealed that the compound structure type is tetragonal with a=b=5.36Å and c=36.09Å. In addition, the value of the c-axis increases to 37.8Å when the Bi ions concentration is elevated to 0.5.